Dr. Felix Fromm
Dr. Felix Fromm
Publications:
2014
- Beljakowa S., Hauck M., Bockstedte MG., Fromm F., Hundhausen M., Nagasawa H., Weber HB., Pensl G., Krieger M.:
Persistent Conductivity in n-type 3C-SiC Observed at Low Temperatures
In: Materials Science Forum 778-780 (2014), p. 265-268
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.778-780.265 - Wehrfritz P., Fromm F., Malzer S., Seyller T.:
Quasi-freestanding epitaxial graphene transistor with silicon nitride top gate
In: Journal of Physics D-Applied Physics 47 (2014), p. 305103 (5pp)
ISSN: 0022-3727
DOI: 10.1088/0022-3727/47/30/305103
2013
- Fromm F., Oliveira MH., Molina-Sanchez A., Hundhausen M., Lopes JMJ., Riechert H., Wirtz L., Seyller T.:
Contribution of the buffer layer to Raman spectrum of epitaxial graphene on SiC(0001)
In: New Journal of Physics n/a (2013), p. n/a
ISSN: 1367-2630
DOI: 10.1088/1367-2630/15/4/043031 - Waldmann D., Butz B., Bauer S., Englert J., Jobst J., Ullmann K., Fromm F., Ammon MM., Enzelberger-Heim M., Hirsch A., Maier S., Schmuki P., Seyller T., Spiecker E., Weber HB., Spiecker E.:
Robust graphene membranes in a silicon carbide frame
In: ACS nano 7 (2013), p. 4441-4448
ISSN: 1936-0851
DOI: 10.1021/nn401037c - Wehrfritz P., Fromm F., Malzer S., Seyller T.:
Silicon nitride as top gate dielectric for epitaxial graphene
In: Alexander A. Lebedev, Sergey Yu. Davydov, Pavel A. Ivanov and Mikhail E. Levinshtein (ed.): Silicon Carbide and Related Materials 2012, Trans Tech Publications, 2013, p. 149-152 (Materials Science Forum)
DOI: 10.4028/www.scientific.net/MSF.740-742.149
2012
- Ostler M., Koch R., Speck F., Fromm F., Vita H., Hundhausen M., Horn K., Seyller T.:
Decoupling the Graphene Buffer Layer SiC(0001) via Interface Oxidation
In: Materials Science Forum 717-720 (2012), p. 649
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.717-720.649 - Waldmann D., Jobst J., Fromm F., Speck F., Seyller T., Krieger M., Weber HB.:
Implanted bottom gate for epitaxial graphene on silicon carbide
In: Journal of Physics D-Applied Physics 45 (2012), p. 154006
ISSN: 0022-3727
DOI: 10.1088/0022-3727/45/15/154006
2011
