Dr. Felix Fromm

2014

• Beljakowa S., Hauck M., Bockstedte MG., Fromm F., Hundhausen M., Nagasawa H., Weber HB., Pensl G., Krieger M.:
  Persistent Conductivity in n-type 3C-SiC Observed at Low Temperatures
  In: Materials Science Forum 778-780 (2014), p. 265-268
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.778-780.265
• Wehrfritz P., Fromm F., Malzer S., Seyller T.:
  Quasi-freestanding epitaxial graphene transistor with silicon nitride top gate
  In: Journal of Physics D-Applied Physics 47 (2014), p. 305103 (5pp)
  ISSN: 0022-3727
  DOI: 10.1088/0022-3727/47/30/305103

2013

• Fromm F., Oliveira MH., Molina-Sanchez A., Hundhausen M., Lopes JMJ., Riechert H., Wirtz L., Seyller T.:
  Contribution of the buffer layer to Raman spectrum of epitaxial graphene on SiC(0001)
  In: New Journal of Physics n/a (2013), p. n/a
  ISSN: 1367-2630
  DOI: 10.1088/1367-2630/15/4/043031
• Waldmann D., Butz B., Bauer S., Englert J., Jobst J., Ullmann K., Fromm F., Ammon MM., Enzelberger-Heim M., Hirsch A., Maier S., Schmuki P., Seyller T., Spiecker E., Weber HB., Spiecker E.:
  Robust graphene membranes in a silicon carbide frame
  In: ACS nano 7 (2013), p. 4441-4448
  ISSN: 1936-0851
  DOI: 10.1021/nn401037c
• Wehrfritz P., Fromm F., Malzer S., Seyller T.:
  Silicon nitride as top gate dielectric for epitaxial graphene
  In: Alexander A. Lebedev, Sergey Yu. Davydov, Pavel A. Ivanov and Mikhail E. Levinshtein (ed.): Silicon Carbide and Related Materials 2012, Trans Tech Publications, 2013, p. 149-152 (Materials Science Forum)
  DOI: 10.4028/www.scientific.net/MSF.740-742.149

2012

• Ostler M., Koch R., Speck F., Fromm F., Vita H., Hundhausen M., Horn K., Seyller T.:
  Decoupling the Graphene Buffer Layer SiC(0001) via Interface Oxidation
  In: Materials Science Forum 717-720 (2012), p. 649
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.717-720.649
• Waldmann D., Jobst J., Fromm F., Speck F., Seyller T., Krieger M., Weber HB.:
  Implanted bottom gate for epitaxial graphene on silicon carbide
  In: Journal of Physics D-Applied Physics 45 (2012), p. 154006
  ISSN: 0022-3727
  DOI: 10.1088/0022-3727/45/15/154006

2011

• Speck F., Jobst J., Fromm F., Ostler M., Waldmann D., Hundhausen M., Weber HB., Seyller T.:
  The quasi-free-standing nature of graphene on H-saturated SiC(0001)
  In: Applied Physics Letters 9 (2011), p. 12206
  ISSN: 0003-6951
  DOI: 10.1063/1.3643034