Peter Wehrfritz

2014

• Wehrfritz P., Fromm F., Malzer S., Seyller T.:
  Quasi-freestanding epitaxial graphene transistor with silicon nitride top gate
  In: Journal of Physics D-Applied Physics 47 (2014), p. 305103 (5pp)
  ISSN: 0022-3727
  DOI: 10.1088/0022-3727/47/30/305103

2013

• Schäfer R., Englert J., Wehrfritz P., Bauer W., Hauke F., Seyller T., Hirsch A.:
  On the way to graphane - Pronounced fluorescence of polyhydrogenated graphene
  In: Angewandte Chemie International Edition 52 (2013), p. 754-757
  ISSN: 1433-7851
  DOI: 10.1002/anie.201206799
• Wehrfritz P., Fromm F., Malzer S., Seyller T.:
  Silicon nitride as top gate dielectric for epitaxial graphene
  In: Alexander A. Lebedev, Sergey Yu. Davydov, Pavel A. Ivanov and Mikhail E. Levinshtein (ed.): Silicon Carbide and Related Materials 2012, Trans Tech Publications, 2013, p. 149-152 (Materials Science Forum)
  DOI: 10.4028/www.scientific.net/MSF.740-742.149